The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Feb. 19, 2009
Yukihiro Kumagai, Hitachinaka, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Naotaka Tanaka, Kasumigaura, JP;
Masahiko Fujisawa, Takarazuka, JP;
Akihiko Ohsaki, Itami, JP;
Yukihiro Kumagai, Hitachinaka, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Naotaka Tanaka, Kasumigaura, JP;
Masahiko Fujisawa, Takarazuka, JP;
Akihiko Ohsaki, Itami, JP;
Renesas Electronics Corporation, Kawasaki, JP;
Abstract
In a semiconductor device having a Low-k film as an interlayer insulator, peeling of the interlayer insulator in a thermal cycle test is prevented, thereby providing a highly reliable semiconductor device. In a semiconductor device having a structure in which interlayer insulators in which buried wires each having a main electric conductive layer made of copper are formed and cap insulators of the buried wires are stacked, the cap insulator having a relatively high Young's modulus and contacting by its upper surface with the interlayer insulator made of a Low-k film having a relatively low Young's modulus is formed so as not to be provided in an edge portion of the semiconductor device.