The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Nov. 21, 2002
Norio Ishitsuka, Tsuchiura, JP;
Yukihiro Kumagai, Tsuchiura, JP;
Hideo Miura, Tsuchiura, JP;
Shuji Ikeda, Kodaira, JP;
Toshifumi Takeda, Kodaira, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Norio Ishitsuka, Tsuchiura, JP;
Yukihiro Kumagai, Tsuchiura, JP;
Hideo Miura, Tsuchiura, JP;
Shuji Ikeda, Kodaira, JP;
Toshifumi Takeda, Kodaira, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The object of the present invention is to provide a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor, which has a high degree of reliability and excellent drain current characteristics. The gist of the invention for attaining the object resides in disposing a silicon nitride film to the side wall of a trench for an active region in which the n-type channel field effect transistor is formed and disposing the silicon nitride film only in the direction perpendicular to the channel direction to the sidewall of the trench for the active region of the p-type channel field effect transistor. According to the present invention, a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor of excellent current characteristics can be provided.