The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Dec. 30, 2002
Hiroyuki Ohta, Tsuchiura, JP;
Yukihiro Kumagai, Chiyoda, JP;
Yasuo Sonobe, Kokubunji, JP;
Kousuke Ishibashi, Oume, JP;
Yasushi Tainaka, Oume, JP;
Masafumi Miyamoto, Higashiyamato, JP;
Hideo Miura, Koshigaya, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Yukihiro Kumagai, Chiyoda, JP;
Yasuo Sonobe, Kokubunji, JP;
Kousuke Ishibashi, Oume, JP;
Yasushi Tainaka, Oume, JP;
Masafumi Miyamoto, Higashiyamato, JP;
Hideo Miura, Koshigaya, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device has p-channel field effect transistors disposed in a lattice shape. In order to generate compression stress in the channel of a p-channel field effect transistor, a long active region of a plurality of transistors is divided for each gate electrode and a sufficiently thin shallow trench isolation (STI) is formed between adjacent gate electrodes. The drain current characteristics can be improved.