Kousuke Ishibashi

Title: Kousuke Ishibashi: Innovator in Semiconductor Technology

Introduction

Kousuke Ishibashi is a notable inventor based in Oume, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the design and functionality of field effect transistors. His innovative approach has led to advancements that enhance the performance of semiconductor devices.

Latest Patents

Ishibashi holds a patent for a semiconductor device that includes active regions and gate electrodes for field effect transistors. This invention features a trench formed between the active regions, which allows for improved drain current characteristics. The design incorporates p-channel field effect transistors arranged in a lattice shape, with a long active region divided for each gate electrode. The use of a sufficiently thin shallow trench isolation (STI) between adjacent gate electrodes generates compression stress in the channel, thereby enhancing device performance.

Career Highlights

Kousuke Ishibashi is associated with Renesas Technology Corporation, a leading company in semiconductor solutions. His work at Renesas has positioned him as a key player in the development of advanced semiconductor technologies. His patent reflects his commitment to innovation and excellence in the field.

Collaborations

Throughout his career, Ishibashi has collaborated with talented individuals such as Hiroyuki Ohta and Yukihiro Kumagai. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting