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Hitachi Power Semiconductor Device, Ltd.

USPTO Granted Patents = 45

EPO Patents = 20

Forward Citations = 49

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82 inventors (with patents filed for the assignee):

Mutsuhiro Mori (11 out of 91 patents)

Tetsuya Ishimaru (9 out of 43 patents)

Tomoyasu Furukawa (8 out of 8 patents)

4. Shinichi Kurita (7 out of 7 patents)

5. Masaki Shiraishi (7 out of 61 patents)

6. Junichi Sakano (6 out of 30 patents)

7. Tomoyuki Miyoshi (4 out of 8 patents)

8. Yujiro Takeuchi (4 out of 4 patents)

9. Daisuke Kawase (4 out of 7 patents)

10. Kohhei Onda (4 out of 4 patents)

11. Toru Masuda (4 out of 27 patents)

12. Hisashi Tanie (3 out of 29 patents)

13. Toshiaki Morita (3 out of 38 patents)

14. Masakazu Sagawa (3 out of 50 patents)

15. Seiichi Hayakawa (3 out of 5 patents)

Core Competencies:

Semiconductor Module

Power Semiconductor Device

Trenched Gate Device

Energization Inspection Apparatus

Upper Arm Drive Circuit

Gate Drive Device

Inverter Device

Electric Power Converter

Synchronous Rectifier

Signal Processing Apparatus

Ultrasonic Diagnostic Apparatus

Power Conversion System

45 patents: Sort by Forward Citations

1. 12463100 - Semiconductor module (2025-11-04),

2. 12453121 - Semiconductor device (2025-10-21),

3. 12438115 - Power semiconductor module (2025-10-07),

4. 12369349 - Trenched gate double diffused semiconductor device with channel impurity concentration adjustment region (2025-07-22),

5. 12339309 - Energization inspection apparatus, method for manufacturing semiconductor device, and energization method (2025-06-24),

6. 12327808 - Semiconductor device (2025-06-10),

7. 12315728 - Method for manufacturing semiconductor device, semiconductor device, semiconductor module, and power conversion device (2025-05-27),

8. 12300716 - Semiconductor device and power conversion device (2025-05-13),

9. 11955878 - Upper arm drive circuit, drive circuit of power conversion device, and power conversion device (2024-04-09),

10. 11942512 - Semiconductor device and power conversion device (2024-03-26),

11. 11881514 - Semiconductor device and termination structure (2024-01-23),

12. 11735997 - Upper arm drive circuit having a reverse current prevention circuit disposed between a power supply of a power conversion device and a first capacitor and control method thereof (2023-08-22),

13. 11652023 - Semiconductor device including a semiconductor element with a gate electrode on only one surface (2023-05-16),

14. 11539361 - Semiconductor device signal transmission circuit for drive-control, method of controlling semiconductor device signal transmission circuit for drive-control, semiconductor device, power conversion device, and electric system for railway vehicle (2022-12-27),

15. 11496041 - Gate drive device, gate drive method, power semiconductor module, and electric power conversion device (2022-11-08),

Hitachi Power Semiconductor Device, Ltd. specializes in the manufacture and supply of power semiconductor devices. They offer a range of products such as diodes, thyristors, IGBT modules, and other power semiconductor solutions. With a dedication to quality and innovation, Hitachi Power Semiconductor Device provides reliable and efficient solutions for various industries including energy, automotive, industrial, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

45 Patents

#3 in Hitachi

#1,790 in Japan

#14,979 in the World

Hitachi Power Semiconductor Device, Ltd.

Forward Citations = 49

82 inventors:

Mutsuhiro Mori (11 out of 91 patents)

Tetsuya Ishimaru (9 out of 43 patents)

Tomoyasu Furukawa (8 out of 8 patents)

4. Shinichi Kurita (7 out of 7 patents)

5. Masaki Shiraishi (7 out of 61 patents)

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