The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jul. 27, 2022
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
Naoki Takeda, Tokyo, JP;
Hisashi Tanie, Tokyo, JP;
Kisho Ashida, Tokyo, JP;
Yu Harubeppu, Tokyo, JP;
Tomohiro Onda, Hitachi, JP;
Masato Nakamura, Hitachi, JP;
HITACHI POWER SEMICONDUCTOR DEVICE, LTD., Ibaraki, JP;
Abstract
Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.