The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Nov. 25, 2021
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
Tomoyasu Furukawa, Tokyo, JP;
Tsubasa Moritsuka, Tokyo, JP;
HITACHI POWER SEMICONDUCTOR DEVICE, LTD., Ibaraki, JP;
Abstract
Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on a main surface side of a drift layer of a first conductivity type is formed, irradiating ions from a second main surface side to a predetermined depth; a step for, after the ion irradiation, converting the ions into donors by anneal processing of heating at 300-450° C. for 60 seconds or less, thereby forming a field-stop layer; and a step for reducing the thickness of a semiconductor substrate to a predetermined value from the second main surface side such that a crystal defect having occurred in the ion irradiating step is eliminated.