The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Nov. 22, 2021
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
Shigeo Tokumitsu, Hitachi, JP;
Masaki Shiraishi, Hitachi, JP;
Yutaka Kato, Hitachi, JP;
Tetsuo Oda, Hitachi, JP;
HITACHI POWER SEMICONDUCTOR DEVICE, LTD., Ibaraki, JP;
Abstract
Provided is a highly reliable semiconductor device in which an influence on device characteristics can be reduced while improving a high temperature and high humidity bias resistance of a termination structure (termination region) of a chip by a relatively simple method. The semiconductor device includes an active region disposed on a main surface of a semiconductor substrate, and a termination region disposed on the main surface so as to surround the active region. The termination region includes an interlayer insulating film formed on the main surface of the semiconductor substrate, and an organic protective film formed so as to cover the interlayer insulating film. An insulating film having a thickness of 100 nm or less and containing nitrogen is provided between the interlayer insulating film and the organic protective film.