The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jan. 30, 2004
Yukihiro Kumagai, Chiyoda, JP;
Hideo Miura, Koshigaya, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Michihiro Mishima, Kunitachi, JP;
Katsuyuki Nakanishi, Higashiyamato, JP;
Yukihiro Kumagai, Chiyoda, JP;
Hideo Miura, Koshigaya, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Michihiro Mishima, Kunitachi, JP;
Katsuyuki Nakanishi, Higashiyamato, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device is provided including a circuit employing two or more field-effect transistor that are desired to have equal characteristics, capable of realizing high reliability and superior transistor characteristics. The transistors which are desired to have equal characteristics are placed in the semiconductor device so as to have the same STI trench width (the width of shallow trench isolation adjacent to an active area in which the transistor is formed). By such composition, stress growing in the active area due to the shallow trench isolation is equalized among the transistors, and, thereby, the characteristics of the transistors can be equalized.