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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5598015 B1

PDFFull Text
Date of Patent:
Jan. 28, 1997

Filed:

Dec. 15, 1994

Hetero-junction bipolar transistor and semiconductor devices using the

Applicant:
Inventors:

Tomonori Tanoue, Machida, JP;

Hiroshi Masuda, Kodaira, JP;

Tohru Nakamura, San Diego, CA (US);

Takahiro Onai, Ome, JP;

Katsuyoshi Washio, Tokorozawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry, Stout & Kraus LLP

Primary Examiner:

Wael Fahmy

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257197 ; 257198 ; 257588 ;
Abstract

A hetero-junction bipolar transistor having an emitter composed of a semiconductor having a wider forbidden band width than that of a semiconductor constituting a base is disclosed. In the transistor, the emitter and the electrode leader area composed of a single crystalline semiconductor are provided being extended from the upper part of the emitter to the surface of the base through an insulating layer, for the purpose of making it possible to miniaturize the transistor and to operate the transistor at a high-speed by decreasing the emitter resistance.

Find Patent Forward Citations

Tanoue, Tomonori. (1997). Hetero-junction bipolar transistor and semiconductor devices using the (U.S. Patent No. 5598015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5598015

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