The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Sep. 20, 1999
Shinichiro Takatani, Koganei, JP;
Hiroshi Miki, Shinjuku-ku, JP;
Keiko Kushida, Kodaira, JP;
Yoshihisa Fujisaki, Hachioji, JP;
Kazuyoshi Torii, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device includes a capacitor having a lower electrode ( ), a high-dielectric-constant or ferroelectric thin film ( ), and an upper electrode ( ) which are subsequently stacked. An impurity having an action of suppressing the catalytic activity of a metal or a conductive oxide constituting the electrode is added to the upper electrode ( ). The addition of the impurity is effective to prevent inconveniences such as a reduction in capacitance, an insulation failure, and the peeling of the electrode due to hydrogen heat-treatment performed after formation of the upper electrode ( ), and to improve the long-term reliability.