The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Mar. 11, 2004
Takaaki Kawahara, Tsukuba, JP;
Kazuyoshi Torii, Tsukuba, JP;
Takaaki Kawahara, Tsukuba, JP;
Kazuyoshi Torii, Tsukuba, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming a first insulating film on a substrate, forming a second insulating film on the first insulating film, and forming a gate electrode on the second insulating film. Forming the second insulating film includes supplying film-forming materials and adsorbing the film-forming materials on the first insulating film, purging the film-forming materials that have not been adsorbed, supplying oxidants to oxidize the adsorbed film-forming materials, and purging the oxidants that have not contributed to oxidization. Forming the second insulating film is repeated in cycles, continuously, and the purging time of the oxidants in an initial number of the cycles is longer than the purging time of the oxidants in cycles following the initial number of cycles.