The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Nov. 30, 2005
Naoki Yamamoto, Kochi, JP;
Norikatsu Takaura, Tokyo, JP;
Yuichi Matsui, Kawasaki, JP;
Nozomu Matsuzaki, Kokubunji, JP;
Kenzo Kurotsuchi, Kokubunji, JP;
Motoyasu Terao, Hinode, JP;
Naoki Yamamoto, Kochi, JP;
Norikatsu Takaura, Tokyo, JP;
Yuichi Matsui, Kawasaki, JP;
Nozomu Matsuzaki, Kokubunji, JP;
Kenzo Kurotsuchi, Kokubunji, JP;
Motoyasu Terao, Hinode, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Disclosed herein is a phase change memory semiconductor integrated circuit device using a chalcogenide film that solves a problem that the operation temperature capable of ensuring long time memory retention is low due to low phase change temperature is and, at the same time, a problem that power consumption of the device is high since a large current requires to rewrite memory information due to low resistance. A portion of constituent elements for a chalcogenide comprises nitride, oxide or carbide which are formed to the boundary between the chalcogenide film and a metal plug as an underlying electrode and to the grain boundary of chalcogenide crystals thereby increasing the phase change temperature and high Joule heat can be generated even by a small current by increasing the resistance of the film.