Shijiazhuang, China

Yuangang Wang

This inventor holds 14 USPTO granted patents, primarily in Gallium Oxide Devices. Top assignees: The 13Th Research Institute of China Electronics Technology Group Corporation, The 13Th Research Institute of China Electronics, The 13Th Research Institute of China Electronics Technolegy Group Corporation. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuangang Wang. Retrieved from https://idiyas.com/inventor/yuangang-wang-kkdskda6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 85.7

Average Co-Inventor Count = 7.3

ph-index = 1


Company Filing History:


Years Active: 2019-2026

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Areas of Expertise:
Schottky Diode
Ultraviolet Detector
GaN Field Effect Transistor
Gallium Oxide
Avalanche Photodiode
Silicon Carbide Detector
Field Effect Transistor
Tilted Mesa
Self-Aligned Surface Channel
Power Device
Enhanced HFET
14 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Yuangang Wang**

Introduction

Yuangang Wang is a prolific inventor based in Shijiazhuang, China, with an impressive portfolio of 12 patents. His work primarily focuses on advancements in semiconductor technology, particularly involving gallium nitride (GaN) and gallium oxide materials. Through his innovative approaches, he has made significant contributions to the field, demonstrating a commitment to pushing the boundaries of electronic component manufacturing.

Latest Patents

One of Yuangang Wang's notable patents is the "Preparation method of GaN field effect transistor based on diamond substrate." This method addresses the technical field of semiconductor manufacturing and involves several meticulous steps: preparing a GaN heterojunction layer on a SiC substrate, thinning and etching the SiC substrate, growing a diamond layer, and preparing electrodes to finalize the GaN transistor device.

Another significant patent is the "Method for producing gallium oxide Schottky barrier diode with a negative beveled angle terminal." This production method comprises four main steps, including forming a photoresist layer, creating an electrode layer on the gallium oxide epitaxial layer, etching the epitaxial layer, and finally forming a second electrode layer on the gallium oxide substrate.

Career Highlights

Yuangang Wang has held key positions at leading institutions such as the 13th Research Institute of China Electronics Technology Group Corporation and the 13th Research Institute of China Electronics. His experience in these organizations has equipped him with the skills and knowledge to spearhead innovative projects in the semiconductor sector.

Collaborations

Throughout his career, Yuangang Wang has collaborated with notable colleagues, including Yuanjie Lv and Zhihong Feng. These partnerships foster a rich exchange of ideas and expertise, contributing to the ongoing advancement of semiconductor technologies.

Conclusion

Yuangang Wang's dedication to innovation is evidenced by his substantial number of patents and his impactful work in semiconductor manufacturing. His contributions not only highlight his expertise but also pave the way for future developments in the industry. As technology evolves, pioneers like Yuangang Wang will continue to shape the landscape of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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