The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Dec. 22, 2023
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Hongyu Liu, Shijiazhuang, CN;
Zhe Qin, Shijiazhuang, CN;
Baodi Li, Shijiazhuang, CN;
Baorui Sun, Shijiazhuang, CN;
Guo Zhou, Shijiazhuang, CN;
Aimin Bu, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Abstract
A method includes: oxidizing a target N-type gallium oxide substrate to obtain a first N-type gallium oxide drift layer formed on an upper surface of the target N-type gallium oxide substrate and a second N-type gallium oxide drift layer formed on a lower surface of the target N-type gallium oxide substrate; preparing a first anode electrode on an upper surface of the first N-type gallium oxide drift layer and a second anode electrode on a lower surface of the second N-type gallium oxide drift layer; cutting the target N-type gallium oxide substrate, to obtain a first N-type gallium oxide substrate and a second N-type gallium oxide substrate; and preparing a first cathode electrode on a lower surface of the first N-type gallium oxide substrate and a second cathode electrode on an upper surface of the second N-type gallium oxide substrate, to obtain two Schottky diodes.