Shijiazhuang, China

Aimin Bu

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: The 13Th Research Institute of China Electronics Technology Group Corporation. Active years: 2026.

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Aimin Bu: Innovator in Semiconductor Material Preparation

Introduction

Aimin Bu is a prominent inventor based in Shijiazhuang, China. He has made significant contributions to the field of semiconductor material preparation, particularly through his innovative patent that addresses challenges in synthesizing phosphides.

Latest Patents

Aimin Bu holds a patent titled "Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion." This invention discloses a device and method for immersed synthesis and continuous growth of semiconductor phosphides under a magnetic field. The device comprises a furnace body, an injection synthesis system, and a static magnetic field generator. The method involves several steps, including heating the crucible, immersing red phosphorus into the crucible, applying a static magnetic field, and performing crystal growth after synthesis. This innovative approach effectively addresses issues related to phosphorus bubbles and enhances the synthesis process.

Career Highlights

Aimin Bu is associated with the 13th Research Institute of China Electronics Technology Group Corporation. His work focuses on advancing semiconductor technologies and improving the efficiency of material preparation processes.

Collaborations

Aimin has collaborated with notable colleagues, including Senfeng Xu and Xiaolan Li, contributing to the advancement of their shared research goals.

Conclusion

Aimin Bu's innovative work in semiconductor material preparation showcases his dedication to solving complex challenges in the field. His contributions are paving the way for advancements in technology and materials science.

Profile summary based on public USPTO records.
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