This inventor holds 2 USPTO granted patents. Top assignee: The 13Th Research Institute of China Electronics Technology Group Corporation. Active years: 2023-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2023-2026
Title: Hongyu Liu - Innovator in Gallium Oxide Technology
Introduction
Hongyu Liu is a prominent inventor based in Shijiazhuang, China. His innovative work primarily focuses on semiconductor technology, specifically in the development of gallium oxide Schottky barrier diodes. With one patent to his name, Liu has made significant contributions to the field, showcasing his expertise and dedication to advancing electronic materials.
Latest Patents
Liu's patent is titled "Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal." This invention provides a novel gallium oxide Schottky barrier diode characterized by its unique negative beveled angle terminal. The production method outlined in the patent consists of four detailed steps:
1. Forming a photoresist layer with a preset pattern on a gallium oxide epitaxial layer, which lies atop a gallium oxide substrate.
2. Creating a first electrode layer on the gallium oxide epitaxial layer.
3. Rotating the gallium oxide substrate and etching the gallium oxide epitaxial layer.
4. Finally, establishing a second electrode layer on the lower surface of the gallium oxide substrate.
This method enhances the diode's performance and opens up new applications in the electronics industry.
Career Highlights
Hongyu Liu is affiliated with the 13th Research Institute of China Electronics Technology Group Corporation, where he has been instrumental in conducting advanced research. His work at this institute demonstrates his commitment to innovation and excellence in the field of electronics.
Collaborations
Throughout his career, Liu has collaborated with esteemed colleagues such as Yuangang Wang and Yuanjie Lv. These partnerships have enriched his research endeavors and fostered an environment of shared knowledge and creativity.
Conclusion
Hongyu Liu’s contributions to the field of gallium oxide technology exemplify the spirit of innovation that drives advancements in semiconductor materials. His patent and collaborative projects highlight a remarkable career dedicated to improving electronic components, paving the way for future breakthroughs in technology. As Liu continues to push the boundaries of what is possible, his work remains a testament to the potential of innovative thinkers in the realm of electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile