The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Apr. 26, 2023
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Shaobo Dun, Shijiazhuang, CN;
Tingting Han, Shijiazhuang, CN;
Hongyu Liu, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Abstract
A gallium oxide Schottky barrier diode with negative beveled angle terminal and a production method thereof are provided. The production method includes four steps. In the first step, a photoresist layer with a preset pattern is formed on a gallium oxide epitaxial layer, where the gallium oxide epitaxial layer is formed on an upper surface of a gallium oxide substrate. In the second step, first electrode layer is formed on the gallium oxide epitaxial layer. In the third step, the gallium oxide substrate is rotated and the gallium oxide epitaxial layer is etched. In the fourth step, a second electrode layer is formed on the lower surface of the gallium oxide substrate.