The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Mar. 02, 2022
Applicant:

The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;

Inventors:

Xingye Zhou, Shijiazhuang, CN;

Xin Tan, Shijiazhuang, CN;

Yuanjie Lv, Shijiazhuang, CN;

Yuangang Wang, Shijiazhuang, CN;

Xubo Song, Shijiazhuang, CN;

Shixiong Liang, Shijiazhuang, CN;

Zhihong Feng, Shijiazhuang, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/14 (2025.01); H10F 71/00 (2025.01); H10F 30/225 (2025.01); H10F 77/122 (2025.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 77/147 (2025.01); H10F 71/1215 (2025.01); H10F 30/225 (2025.01); H10F 77/122 (2025.01); H10F 77/241 (2025.01); H10F 77/306 (2025.01);
Abstract

A ultraviolet detector includes a substrate; a first epitaxial layer that is a heavily doped epitaxial layer and located on the substrate, a second epitaxial layer located on the first epitaxial layer, where the second epitaxial layer is a lightly doped epitaxial layer, or a double-layer or multi-layer structure composed of at least one lightly doped epitaxial layer and at least one heavily doped epitaxial layer; an ohmic contact layer located on the second epitaxial layer or formed in the second epitaxial layer, where the ohmic contact layer is a graphical heavily doped layer; and a first metal electrode layer located on the ohmic contact layer.


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