The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Sep. 24, 2020
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Xingye Zhou, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Xin Tan, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Jia Li, Shijiazhuang, CN;
Yulong Fang, Shijiazhuang, CN;
Abstract
A method for preparing an avalanche photodiode includes preparing a mesa on a wafer, growing a sacrificial layer on an upper surface of the wafer and a side surface of the mesa, removing the sacrificial layer in an ohmic contact electrode region of the wafer, preparing an ohmic contact electrode in the ohmic contact electrode region of the wafer, removing the sacrificial layer in a non-mesa region of the wafer, growing a passivation layer on the upper surface of the wafer and the side surface of the mesa, removing the passivation layer on the upper surface of the mesa of the wafer and the passivation layer in the non-mesa region of the wafer corresponding to the ohmic contact electrode region, and removing the sacrificial layer on the upper surface of the mesa of the wafer.