The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Oct. 01, 2020
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Xingye Zhou, Shijiazhuang, CN;
Xin Tan, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Shixiong Liang, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Abstract
The disclosure provides a normally-off gallium oxide field-effect transistor structure and a preparation method therefor, and relates to the technical field of semiconductor device. The normally-off gallium oxide field-effect transistor structure comprises a substrate layer and an n-type doped gallium oxide channel layer from bottom to top. The n-type doped gallium oxide channel layer is provided with a source, a drain, and a gate. The gate is located between the source and the drain. A no-electron channel region is provided in the n-type doped gallium oxide channel layer located below the gate.