The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Oct. 13, 2020
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Xingye Zhou, Shijiazhuang, CN;
Xin Tan, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Xuefeng Zou, Shijiazhuang, CN;
Shixiong Liang, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Abstract
The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an Nhigh-concentration substrate layer, an Nlow-concentration GaOepitaxial layer and an anode metal layer from bottom to top, wherein the Nlow-concentration GaOepitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.