Xuefeng Zou

Title: Innovations and Contributions of Inventor Xuefeng Zou

Introduction

Xuefeng Zou is a notable inventor based in Shijiazhuang, China, recognized for his contributions to the semiconductor manufacturing field. With a total of two patents to his name, Zou's innovative work has significantly enhanced the capabilities of semiconductor devices.

Latest Patents

Zou's latest inventions demonstrate his expertise in semiconductor technology. His first patent, titled "Gallium oxide SBD terminal structure and preparation method," introduces a gallium oxide Schottky barrier diode (SBD) terminal structure. This invention boasts a configuration comprising a cathode metal layer, an N-high concentration substrate layer, an N-low concentration GaO epitaxial layer, and an anode metal layer. The innovation ensures improved breakdown voltage while maintaining low on-resistance, addressing critical challenges in semiconductor device performance.

The second patent, "Calibration method, system and device of on-wafer S parameter of vector network analyzer," reveals a comprehensive approach to calibrating the S parameters of vector network analyzers. This method includes steps to acquire parameters from crosstalk calibration pieces, thereby enabling accurate calibration of measurement devices critical in the semiconductor field.

Career Highlights

Xuefeng Zou is affiliated with the 13th Research Institute of China Electronics Technology Group Corporation, where he applies his innovative skills to research and development in semiconductor technology. His role at this esteemed institute showcases his commitment to advancing electronic technology and fostering innovation.

Collaborations

Throughout his career, Zou has had the opportunity to collaborate with talented professionals, including colleagues Yuanjie Lv and Yuangang Wang. This teamwork not only enhances his research but also contributes to the collective knowledge and developments in the field of semiconductors.

Conclusion

Xuefeng Zou exemplifies the spirit of innovation within the semiconductor industry. Through his groundbreaking patents and collaborative efforts, he continues to drive advancements in technology that are essential for the future of electronic devices. His work at the 13th Research Institute reflects a dedication to improving semiconductor manufacturing processes, demonstrating the impact of inventive minds in shaping modern technology.