The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Sep. 29, 2020
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Xingye Zhou, Shijiazhuang, CN;
Xin Tan, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Shixiong Liang, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Abstract
The present disclosure discloses a method for preparing an isolation area of a gallium oxide device, the method comprising: depositing a mask layer on a gallium oxide material; removing a preset portion region of the mask layer; preparing an isolation area in a position, corresponding to the preset portion region, on the gallium oxide material by using a high-temperature oxidation technique, with the isolation area being located between active areas of the gallium oxide device; and removing the remaining mask layer on the gallium oxide material. In the disclosure, the isolation area is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area, thereby achieving isolation between the active areas of the gallium oxide device.