The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Dec. 11, 2017
The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;
Yuangang Wang, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Xin Tan, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Xingye Zhou, Shijiazhuang, CN;
Yulong Fang, Shijiazhuang, CN;
Guodong Gu, Shijiazhuang, CN;
Hongyu Guo, Shijiazhuang, CN;
Shujun Cai, Shijiazhuang, CN;
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS, Hebei, CN;
Abstract
An enhanced HFET, comprising a HFET device body. Regions without two-dimensional electron gas are provided on a channel layer () at the portion between a drain electrode () and a source electrode () of the HFET device body, and there is a region without two-dimensional electron gas provided on the channel layer () at the portions excluding the area under a gate electrode (); two-dimensional electron gas regions are provided on the channel layer () excluding the portions located between the drain electrode () and the source electrode () and provided with the regions without two-dimensional electron gas; the channel layer () at the portion between the gate electrode () and the source electrode () and the portion between the gate electrode () and the drain electrode () are each provided with a two-dimensional electron gas region; and two-dimensional electron gas () is provided at a portion or whole portion of a two-dimensional electron gas layer at the channel layer () at the portion right under the gate electrode (). The HFET has the advantages of high saturation current, high threshold voltage controllability, fast response, low energy consumption, and the like.