Shijiazhuang, China

Shujun Cai

This inventor holds 1 USPTO granted patent. Top assignee: The 13Th Research Institute of China Electronics. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shujun Cai. Retrieved from https://idiyas.com/inventor/shujun-cai-p2g0cq3u

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 10.0

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Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovator Spotlight: Shujun Cai and His Contributions to HFET Technology

Introduction: Shujun Cai, an accomplished inventor based in Shijiazhuang, China, has made a significant impact in the field of semiconductor technology. With a focus on high-frequency electron transistor (HFET) devices, Cai has developed innovative solutions that enhance performance and efficiency in electronic applications.

Latest Patents: Cai's notable patent is titled "Enhanced HFET," which involves a sophisticated design of an HFET device body. This patent describes a unique configuration featuring regions without two-dimensional electron gas on the channel layer, strategically positioned between the drain and source electrodes. This design innovation allows for high saturation current, improved threshold voltage controllability, rapid response, and low energy consumption, positioning his invention as a valuable advancement in the semiconductor industry.

Career Highlights: Shujun Cai is currently affiliated with the 13th Research Institute of China Electronics, where his work revolves around the development of cutting-edge electronic components. His dedication to research and innovation has paid off with the successful filing of his patent, showcasing his expertise in semiconductor device engineering.

Collaborations: Throughout his career, Cai has collaborated with esteemed colleagues, including Yuangang Wang and Zhihong Feng. Their teamwork and shared vision for semiconductor advancements have contributed to the successful development of technologies that push the boundaries of current applications.

Conclusion: Shujun Cai's contributions to HFET technology highlight the importance of innovation in the electronics sector. His patented work demonstrates an impressive blend of technical knowledge and practical application, making him a notable inventor in the field. As the demand for efficient and high-performance electronic devices continues to grow, innovations like Cai's will play a critical role in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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