The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Apr. 25, 2022
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yuangang Wang, Shijiazhuang, CN;
Shaobo Dun, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Xingchang Fu, Shijiazhuang, CN;
Shixiong Liang, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Hongyu Guo, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Abstract
The disclosure provides a preparation method of GaN field effect transistor based on diamond substrate, and relates to the technical field of semiconductor manufacturing. The method includes the following steps: preparing a GaN heterojunction layer on the front-side of a SiC substrate; thinning the SiC substrate; etching the SiC substrate; growing a diamond layer; removing a sacrificial layer and the diamond layer on the sacrificial layer; preparing a source electrode, a drain electrode and a gate electrode on the front surface of the GaN heterojunction layer; etching the SiC substrate and the GaN heterojunction layer to form a source through hole communicated with the source electrode; and removing the through hole mask layer, and preparing back grounding metal to complete the preparation of the diamond substrate GaN transistor device.