The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Mar. 28, 2019
The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;
Yuangang Wang, Shijiazhuang, CN;
Yuanjie Lv, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Cui Yu, Shijiazhuang, CN;
Chuangjie Zhou, Shijiazhuang, CN;
Zezhao He, Shijiazhuang, CN;
Xubo Song, Shijiazhuang, CN;
Shixiong Liang, Shijiazhuang, CN;
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS, Hebei, CN;
Abstract
The disclosure provides a method for preparing a self-aligned surface channel field effect transistor, and provides a power device. The method includes the following steps: depositing a first metal mask layer; preparing a first photoresist layer; forming a source area pattern and a drain area pattern; depositing a source metal layer and a drain metal layer on the source area pattern and the drain area pattern; peeling off and removing the first photoresist layer; depositing a second metal mask layer; preparing a second photoresist layer, and forming at least one gate area pattern closer toward the source metal layer by performing exposure and development; removing the first metal mask layer and the second metal mask layer between the source metal layer and the drain metal layer by a wet corrosion; depositing a gate metal layer on the gate area pattern; and peeling off and removing the second photoresist layer.