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For the Inventor, By the Inventor

Zhubei, Taiwan

Yuan-Tai Tseng

USPTO Granted Patents = 72 

Average Co-Inventor Count = 3.4

ph-index = 5

Forward Citations = 110(Granted Patents)

Forward Citations (Not Self Cited) = 100(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Lugu Township, Nantou County, TW (2012)
  • Hsinchu County, TW (2015 - 2023)
  • Zhubei, TW (2015 - 2024)
  • Hsinchu, TW (2017 - 2024)

Company Filing History:

goldMedal72 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2012-2025

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Areas of Expertise:
Memory Cell
Thermal Crosstalk
Programmable Metallization Cell
Phase Change Memory
Resistive Random-Access Memory
Semiconductor Structure
3D RRAM Cell
Leakage Resistant RRAM
Magnetic Tunnel Junction
Inductor Structure
Thin Film Resistor
Embedded Nonvolatile Memory
72 patents (USPTO):Explore Patents
1. 12477746 - Method of forming memory cell (2025-11-18),
2. 12369332 - Memory device for reducing thermal crosstalk (2025-07-22),
3. 12354695 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2025-07-08),
4. 12310261 - Memory device having via landing protection (2025-05-20),
5. 12302767 - Buffer layer in memory cell to prevent metal redeposition (2025-05-13),
6. 12274182 - Sidewall spacer structure for memory cell (2025-04-08),
7. 12048258 - Phase change memory device and method for manufacturing the same (2024-07-23),
8. 11950434 - Memory device for reducing thermal crosstalk (2024-04-02),
9. 11871686 - Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls (2024-01-09),
10. 11855127 - Semiconductor structure and method for forming the same (2023-12-26),
11. 11818962 - Sidewall spacer structure for memory cell (2023-11-14),
12. 11805660 - Semiconductor structure (2023-10-31),
13. 11785861 - Semiconductor structure and method of manufacturing the same (2023-10-10),
14. 11785786 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2023-10-10),
15. 11751406 - 3D RRAM cell structure for reducing forming and set voltages (2023-09-05),

Title: Inventor Yuan-Tai Tseng: Revolutionizing Technology in Zhubei

Introduction: Yuan-Tai Tseng is a visionary inventor based in Zhubei, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tseng holds several patents in the areas of electronics, telecommunications, and renewable energy, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Tseng has worked with leading tech companies in Taiwan, spearheading projects that have led to significant advancements in various industries.

Collaborations: Tseng has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing in the tech community.

Conclusion: Yuan-Tai Tseng's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the world of inventions, with a lasting impact on the global tech landscape.

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