Yuan-Tai Tseng

This inventor holds 72 USPTO granted patents and 9 published patent applications, primarily in Memory Device Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuan-Tai Tseng. Retrieved from https://idiyas.com/inventor/yuan-tai-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 72 (Patent Applications = 9)

% Patents Active = 90.3

Average Co-Inventor Count = 3.4

ph-index = 5

Forward Citations = 114(Granted Patents)

Forward Citations (Not Self Cited) = 100(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Lugu Township, Nantou County, TW (2012)
Hsinchu County, TW (2015 - 2023)
Zhubei, TW (2015 - 2024)
Hsinchu, TW (2017 - 2024)

Company Filing History:

72 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2012-2025

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Areas of Expertise:

Memory Cell

Thermal Crosstalk

RRAM

Semiconductor Structure

Programmable Metallization

Buffer Layer

3D RRAM Cell

Leakage Resistance

Integrated Circuit

Phase Change Memory

Sidewall Spacer

Thin Film Resistor

72 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12477746 - Method of forming memory cell (2025-11-18),

2. 12369332 - Memory device for reducing thermal crosstalk (2025-07-22),

3. 12354695 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2025-07-08),

4. 12310261 - Memory device having via landing protection (2025-05-20),

5. 12302767 - Buffer layer in memory cell to prevent metal redeposition (2025-05-13),

6. 12274182 - Sidewall spacer structure for memory cell (2025-04-08),

7. 12048258 - Phase change memory device and method for manufacturing the same (2024-07-23),

8. 11950434 - Memory device for reducing thermal crosstalk (2024-04-02),

9. 11871686 - Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls (2024-01-09),

10. 11855127 - Semiconductor structure and method for forming the same (2023-12-26),

11. 11818962 - Sidewall spacer structure for memory cell (2023-11-14),

12. 11805660 - Semiconductor structure (2023-10-31),

13. 11785861 - Semiconductor structure and method of manufacturing the same (2023-10-10),

14. 11785786 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2023-10-10),

15. 11751406 - 3D RRAM cell structure for reducing forming and set voltages (2023-09-05),

Title: Inventor Yuan-Tai Tseng: Revolutionizing Technology in Zhubei

Introduction: Yuan-Tai Tseng is a visionary inventor based in Zhubei, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tseng holds several patents in the areas of electronics, telecommunications, and renewable energy, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Tseng has worked with leading tech companies in Taiwan, spearheading projects that have led to significant advancements in various industries.

Collaborations: Tseng has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing in the tech community.

Conclusion: Yuan-Tai Tseng's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the world of inventions, with a lasting impact on the global tech landscape.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

9 patents pending: