The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Mar. 21, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chern-Yow Hsu, Hsin-Chu County, TW;

Yuan-Tai Tseng, Hsinchu County, TW;

Shih-Chang Liu, Kaohsiung County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H01L 23/522 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H01L 23/5226 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a memory region, the memory region includes a first metal line, a magnetic tunneling junction (MTJ) over the first metal line, a cap, wherein at least a portion of the cap is above the MTJ, a first stop layer above the cap, and a first metal via being disposed over the MTJ and in direct contact with the first stop layer, and a logic region adjacent to the memory region, the logic region includes a second metal line, a third metal line over the second metal line, a second stop layer being disposed over the third metal line, and a second metal via over the third metal line.


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