The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Aug. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yao-Wen Chang, Taipei, TW;
Chung-Chiang Min, Zhubei, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Hung Cho Wang, Taipei, TW;
Tsung-Hsueh Yang, Taichung, TW;
Yuan-Tai Tseng, Zhubei, TW;
Sheng-Huang Huang, Hsinchu, TW;
Chia-Hua Lin, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip comprising a memory cell. The memory cell is disposed within a dielectric structure that overlies a substrate. The memory cell comprises a data storage structure disposed between a bottom electrode and a top electrode. An upper conductive structure is disposed in the dielectric structure and on the top electrode. The upper conductive structure comprises a protrusion disposed below an upper surface of the top electrode. A sidewall spacer structure is disposed around the memory cell. The sidewall spacer structure comprises a first sidewall spacer layer around the data storage structure and a second sidewall spacer layer abutting the first sidewall spacer layer. The protrusion contacts the second sidewall spacer layer.