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For the Inventor, By the Inventor

Zhubei, Taiwan

Chung-Chiang Min

This inventor holds 36 USPTO granted patents and 1 published patent application, primarily in Non-Volatile Memory. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chung-Chiang Min. Retrieved from https://idiyas.com/inventor/chung-chiang-min

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 91.7

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 44(Granted Patents)


Location History:

  • Hsinchu County, TW (2017 - 2023)
  • Zhubei, TW (2014 - 2024)

Company Filing History:

goldMedal36 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

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Areas of Expertise:
Non-volatile Memory
Flash Memory
Memory Cell
Semiconductor Structure
Manufacturing Technology
Programmable Metallization
Buffer Layer
Etch Stop Layer
Sidewall Spacer
Capacitor Structure
Thin-Film Storage
Self-Aligned Split Gate
36 patents (USPTO):Explore Patents
1. 12501842 - Non-volatile memory device and manufacturing technology (2025-12-16),
2. 12477746 - Method of forming memory cell (2025-11-18),
3. 12444650 - Etch stop layer for memory device formation (2025-10-14),
4. 12354695 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2025-07-08),
5. 12302767 - Buffer layer in memory cell to prevent metal redeposition (2025-05-13),
6. 12274182 - Sidewall spacer structure for memory cell (2025-04-08),
7. 12027420 - Etch stop layer for memory device formation (2024-07-02),
8. 11925032 - Memory device with flat-top bottom electrodes and methods for forming the same (2024-03-05),
9. 11818962 - Sidewall spacer structure for memory cell (2023-11-14),
10. 11785861 - Semiconductor structure and method of manufacturing the same (2023-10-10),
11. 11785786 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2023-10-10),
12. 11665911 - Method of forming memory cell (2023-05-30),
13. 11532785 - Buffer layer in memory cell to prevent metal redeposition (2022-12-20),
14. 11495743 - Non-volatile memory device and manufacturing technology (2022-11-08),
15. 11437431 - Memory device with flat-top bottom electrodes and methods for forming the same (2022-09-06),

Title: Chung-Chiang Min: Innovator from Zhubei

Introduction: Chung-Chiang Min is a renowned inventor hailing from Zhubei, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chung-Chiang Min holds several patents in the areas of electronics, semiconductor technology, and renewable energy, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Chung-Chiang Min has worked with leading tech companies, research institutions, and universities, where he has played a pivotal role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Chung-Chiang Min has collaborated with top researchers, engineers, and scientists from around the globe, fostering a culture of innovation and knowledge exchange that has led to numerous breakthroughs in the field.

Conclusion: Chung-Chiang Min's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his reputation as a visionary inventor whose work continues to inspire and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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