The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Jul. 15, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Fu-Ting Sung, Taoyuan County, TW;

Chung-Chiang Min, Hsinchu County, TW;

Yuan-Tai Tseng, Hsinchu County, TW;

Chern-Yow Hsu, Hsin-Chu County, TW;

Shih-Chang Liu, Kaohsiung County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01L 27/105 (2023.01); H01L 29/40 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01L 27/105 (2013.01); H01L 29/40 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02);
Abstract

The present disclosure provides a semiconductor structure, including an Nmetal layer, a bottom electrode over the Nmetal layer, a magnetic tunneling junction (MTJ) over the bottom electrode, a top electrode over the MTJ, and an (N+M)metal layer over the Nmetal layer. N and M are positive integers. The (N+M)metal layer surrounds a portion of a sidewall of the top electrode. A manufacturing method of forming the semiconductor structure is also provided.


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