The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Oct. 20, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Chiang Min, Zhubei, TW;

Chang-Chih Huang, Taichung, TW;

Yuan-Tai Tseng, Zhubei, TW;

Kuo-Chyuan Tzeng, Chu-Pei, TW;

Yihuei Zhu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1246 (2013.01); H01L 27/2409 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); H01L 45/1675 (2013.01);
Abstract

Some embodiments relate to a memory device. The memory device includes a first electrode overlying a substrate. A data storage layer overlies the first electrode. A second electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the first electrode to the second electrode. An active metal layer is disposed between the data storage layer and the second electrode. A buffer layer is disposed between the active metal layer and the second electrode. The buffer layer has a lower reactivity to oxygen than the active metal layer.


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