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Kuo-Chyuan Tzeng

This inventor holds 48 USPTO granted patents and 15 published patent applications, primarily in Phase Change Memory. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2000-2026.

USPTO Granted Patents = 48 (Patent Applications = 15)

% Patents Active = 87.5

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 219(Granted Patents)

Location History:

Chu-pei, TW (2000 - 2023)
Hsin-Chu, TW (2001 - 2024)

Company Filing History:

48 out of 42,810

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2000-2026

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Areas of Expertise:

Phase Change Memory

MIM Capacitors

Semiconductor Devices

Memory Arrays

Double Patterning

DRAM Process

1T-RAM Technology

High Density Plasma

Capacitor Design

Memory Cell Structure

Embedded Systems

Microelectronic Isolation

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12757643 - Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same (2026-10-06),

2. 12721053 - Phase change material switch with efficient heat spreader and methods for forming the same (2026-08-25),

3. 12701929 - PCM device (2026-08-04),

4. 12648150 - Memory arrays including continuous line-shaped random access memory strips and method forming same (2026-06-02),

5. 12484459 - Planarization-less phase change material switch (2025-11-25),

6. 12387786 - Bit line and word line connection for memory array (2025-08-12),

7. 12369503 - Encapsulated phase change material switch and methods for forming the same (2025-07-22),

8. 12354951 - Layout for reducing loading at line sockets and/or for increasing overlay tolerance while cutting lines (2025-07-08),

9. 12302767 - Buffer layer in memory cell to prevent metal redeposition (2025-05-13),

10. 12268103 - Phase change material switch with improved thermal confinement and methods for forming the same (2025-04-01),

11. 12048258 - Phase change memory device and method for manufacturing the same (2024-07-23),

12. 11715519 - Bit line and word line connection for memory array (2023-08-01),

13. 11676822 - Self-aligned double patterning process and semiconductor structure formed using thereof (2023-06-13),

14. 11532785 - Buffer layer in memory cell to prevent metal redeposition (2022-12-20),

15. 11404480 - Memory arrays including continuous line-shaped random access memory strips and method forming same (2022-08-02),

Title: The Innovative Journey of Inventor Kuo-Chyuan Tzeng

Introduction: Kuo-Chyuan Tzeng, a talented inventor hailing from Chu-Pei, Taiwan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Kuo-Chyuan Tzeng's latest patents include advancements in renewable energy technologies, smart home devices, and medical equipment, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Tzeng has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the realm of innovation.

Collaborations: Throughout his career, Kuo-Chyuan Tzeng has collaborated with top engineers, scientists, and designers from around the globe, fostering a culture of creativity and excellence in all his projects.

Conclusion: In conclusion, Kuo-Chyuan Tzeng's passion for innovation, coupled with his relentless drive to create a better future through technology, solidifies his position as a visionary inventor shaping the world we live in today.

Profile summary based on public USPTO records.

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