The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jun. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chang-Chih Huang, Taichung, TW;

Jui-Yu Pan, Neipu Township, TW;

Kuo-Chyuan Tzeng, Chu-Pei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0028 (2013.01); G11C 11/56 (2013.01); G11C 13/0026 (2013.01); H10B 63/20 (2023.02); H10B 63/80 (2023.02); H10B 63/84 (2023.02); H10N 70/063 (2023.02); H10N 70/8265 (2023.02);
Abstract

Various embodiments of the present application are directed towards an integrated chip including a first conductive interconnect structure overlying a substrate. A first memory stack is disposed on the first conductive interconnect structure. A second conductive interconnect structure overlies the first memory stack. The second conductive interconnect structure is spaced laterally between opposing sidewalls of the first conductive interconnect structure. A third conductive interconnect structure is disposed on the first conductive interconnect structure. A top surface of the third conductive interconnect structure is vertically above the second conductive interconnect structure.


Find Patent Forward Citations

Loading…