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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12648150 B1

PDFFull Text
Date of Patent:
Jun. 02, 2026

Filed:

Jun. 30, 2022

Memory arrays including continuous line-shaped random access memory strips and method forming same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Tzu Lin, Taichung, TW;

Kuo-Chyuan Tzeng, Chu-Pei, TW;

Kao-Chao Lin, Fanlu Township, TW;

Chang-Chih Huang, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract

A device includes a first plurality of conductive strips have lengthwise directions in a first direction, a selector array overlapping the first plurality of conductive strips, an electrode array overlapping the selector array, a plurality of memory strips over the electrode array, and a second plurality of conductive strips overlapping the plurality of memory strips. The plurality of memory strips and the second plurality of conductive strips have lengthwise directions in a second direction perpendicular to the first direction.

Find Patent Forward Citations

Lin, Yi-Tzu. (2026). Memory arrays including continuous line-shaped random access memory strips and method forming same (U.S. Patent No. 12648150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12648150

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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