The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jun. 01, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Chia Wen Liang, Zhubei, TW;
Chang-Chih Huang, Taichung, TW;
Han-Yu Chen, Zhubei, TW;
Kuo-Chyuan Tzeng, Chu-Pei, TW;
Tsung-Hao Yeh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A dielectric isolation layer having a top surface may be formed over a substrate. A heater line, a phase change material (PCM) line, and an in-process conductive barrier plate may be formed over the dielectric isolation layer. An electrode material layer may be formed over the in-process conductive barrier plate. The electrode material layer and the in-process conductive barrier plate may be patterned such that patterned portions of the in-process conductive barrier plate include a first conductive barrier plate contacting a first area of a top surface of the PCM line, and a second conductive barrier plate contacting a second area of the top surface of the PCM line, and patterned portions of the electrode material layer include a first electrode contacting the first conductive barrier plate and a second electrode contacting the second conductive barrier plate.