Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same

Abstract

Dielectric material layers and an insulating layer may be formed over a semiconductor substrate containing a semiconductor region. A via opening may be etched through at least the insulating layer. A metal layer may be deposited and patterned to provide a heater element of a phase change memory (PCM) switch and an electrostatic discharge metal structure that fills the via opening. A phase change material layer may be deposited over the heater element and the electrostatic discharge metal structure. The phase change material layer may be patterned into a phase change material portion by performing an anisotropic etch process. An electrostatic discharge path including the electrostatic discharge metal structure and the doped semiconductor region discharges electrostatic charges that accumulate in the insulating layer into the semiconductor substrate during the anisotropic etch process.