The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jun. 09, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Kuo-Pin Chang, Hsinchu, TW;
Yu-Wei Ting, Taipei, TW;
Tsung-Hao Yeh, Hsinchu, TW;
Kuo-Chyuan Tzeng, Chu-Pei, TW;
Kuo-Ching Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Phase change material (PCM) switches and methods of fabrication thereof that provide improved thermal confinement within a phase change material layer. A PCM switch may include a dielectric capping layer between a heater pad and the phase change material layer of the PCM switch that is laterally-confined such opposing sides of the dielectric capping layer the heater pad may form continuous surfaces extending transverse to the signal transmission pathway across the PCM switch. Heat transfer from the heater pad through the dielectric capping layer to the phase change material layer may be predominantly vertical, with minimal thermal dissipation along a lateral direction. The localized heating of the phase change material may improve the efficiency of the PCM switch enabling lower bias voltages, minimize the formation of regions of intermediate resistivity in the PCM switch, and improve the parasitic capacitance characteristics of the PCM switch.