The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Dec. 07, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chung-Chiang Min, Zhubei, TW;
Chang-Chih Huang, Taichung, TW;
Yuan-Tai Tseng, Zhubei, TW;
Kuo-Chyuan Tzeng, Chu-Pei, TW;
Yihuei Zhu, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/828 (2023.02); H10B 63/20 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/882 (2023.02); H10N 70/883 (2023.02);
Abstract
Some embodiments relate to a memory device. The memory device includes a first electrode overlying a substrate. A data storage layer is disposed on the first electrode. A second electrode overlies the data storage layer. A buffer layer is disposed between the data storage layer and the second electrode.