The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jul. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yuan-Tai Tseng, Zhubei, TW;

Chung-Chiang Min, Zhubei, TW;

Shih-Chang Liu, Alian Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 21/00 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a lower interconnect disposed within a dielectric structure over a substrate. A memory device includes a data storage structure disposed between a bottom electrode and a top electrode. The bottom electrode is electrically coupled to the lower interconnect. A sidewall spacer includes an interior sidewall that continuously extends from along an outermost sidewall of the top electrode to below an outermost sidewall of the bottom electrode. The sidewall spacer further includes an outermost sidewall that extends from a bottom surface of the sidewall spacer to above a top of the bottom electrode.


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