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Hsinchu, Taiwan

Sheng-Huang Huang

USPTO Granted Patents = 56 (Patent Applications = 9)

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 102(Granted Patents)

Forward Citations (Not Self Cited) = 83(Dec 10, 2025)

Location History:

Tainan, TW (2014 - 2016)
Hsinchu, TW (2018 - 2024)

Company Filing History:

54 out of 40,927

Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Years Active: 2014-2026

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Areas of Expertise:

Magnetic Tunnel Junction

MRAM Technology

Semiconductor Memory Device

Integrated Circuit Fabrication

Etch Stop Layer

Memory Cell Design

Top Electrode Connection

Sidewall Spacer Structure

Magnetic Random Access Memory

Multilayered Spacer Structure

Semiconductor Structure Manufacturing

Electrode Via Interface

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12520731 - Memory device (2026-01-06),

2. 12464955 - Magnetic tunnel junction device and method of forming the same (2025-11-04),

3. 12444650 - Etch stop layer for memory device formation (2025-10-14),

4. 12426514 - Techniques for MRAM MTJ top electrode connection (2025-09-23),

5. 12426274 - Method for MRAM top electrode connection (2025-09-23),

6. 12342730 - Magnetic tunnel junction structures with protection outer layers (2025-06-24),

7. 12329039 - Magnetic tunnel junction structures with protection outer layers (2025-06-10),

8. 12284814 - Semiconductor structure and manufacturing method of the same (2025-04-21),

9. 12274183 - Memory cell with top electrode via (2025-04-08),

10. 12274182 - Sidewall spacer structure for memory cell (2025-04-08),

11. 12274072 - Semiconductor memory device and method for fabricating the same (2025-04-08),

12. 12250826 - Integrated circuit device and method for fabricating the same (2025-03-11),

13. 12223989 - Semiconductor device and method for fabricating the same (2025-02-11),

14. 12167614 - Techniques for MRAM MTJ top electrode to via interface (2024-12-10),

15. 12069963 - Magnetic random access memory device and formation method thereof (2024-08-20),

Title: The Innovative Journey of Sheng-Huang Huang

Introduction: Sheng-Huang Huang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Sheng-Huang Huang's latest patents include advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Sheng-Huang Huang has held key roles in leading tech companies, driving research and development initiatives that have resulted in numerous successful patents and products.

Collaborations: Throughout his career, Sheng-Huang Huang has collaborated with top researchers, engineers, and industry experts, fostering a culture of innovation and excellence in all his projects.

Conclusion: Sheng-Huang Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and entrepreneurs worldwide.

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