logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Sheng-Huang Huang

This inventor holds 60 USPTO granted patents and 9 published patent applications, primarily in Magnetic Memory Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute, Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Huang Huang. Retrieved from https://idiyas.com/inventor/sheng-huang-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 60 

% Patents Active = 95.0

Average Co-Inventor Count = 4.8

ph-index = 5

Forward Citations = 107(Granted Patents)

Forward Citations (Not Self Cited) = 83(Dec 10, 2025)


Location History:

  • Tainan, TW (2014 - 2016)
  • Hsinchu, TW (2018 - 2024)

Company Filing History:

goldMedal56 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 9,312 
 
Industrial Technology Research Institute
 patents
bronzeMedal2 out of 503 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2014-2026

Loading Chart...
Areas of Expertise:
Magnetic Memory
MRAM
MTJ
Memory Device
Semiconductor Structure
Fabrication Method
Integrated Circuit
Etch Stop Layer
Top Electrode
Sidewall Spacer
Memory Cell
60 patents (USPTO):Explore Patents
1. 12581864 - Memory device and fabrication method thereof (2026-03-17),
2. 12563975 - Magnetic memory device and method for manufacturing the same (2026-02-24),
3. 12550619 - Techniques for MRAM MTJ top electrode connection (2026-02-10),
4. 12543506 - Memory device and fabrication method thereof (2026-02-03),
5. 12520731 - Memory device (2026-01-06),
6. 12464955 - Magnetic tunnel junction device and method of forming the same (2025-11-04),
7. 12444650 - Etch stop layer for memory device formation (2025-10-14),
8. 12426514 - Techniques for MRAM MTJ top electrode connection (2025-09-23),
9. 12426274 - Method for MRAM top electrode connection (2025-09-23),
10. 12342730 - Magnetic tunnel junction structures with protection outer layers (2025-06-24),
11. 12329039 - Magnetic tunnel junction structures with protection outer layers (2025-06-10),
12. 12284814 - Semiconductor structure and manufacturing method of the same (2025-04-21),
13. 12274183 - Memory cell with top electrode via (2025-04-08),
14. 12274182 - Sidewall spacer structure for memory cell (2025-04-08),
15. 12274072 - Semiconductor memory device and method for fabricating the same (2025-04-08),

Title: The Innovative Journey of Sheng-Huang Huang

Introduction: Sheng-Huang Huang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Sheng-Huang Huang's latest patents include advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Sheng-Huang Huang has held key roles in leading tech companies, driving research and development initiatives that have resulted in numerous successful patents and products.

Collaborations: Throughout his career, Sheng-Huang Huang has collaborated with top researchers, engineers, and industry experts, fostering a culture of innovation and excellence in all his projects.

Conclusion: Sheng-Huang Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…