The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Sheng-Chang Chen, Hsinchu County, TW;
Hung Cho Wang, Taipei, TW;
Sheng-Huang Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A MRAM device includes a substrate, a first bottom electrode, a first MTJ stack, a first spacer, a topography-smoothing layer and a second ILD layer. The substrate includes a first ILD layer having a metal line. The first MTJ stack is over the first bottom electrode. The first spacer surrounds sidewalls of the first MTJ stack. The topography-smoothing layer extends over a top surface of the first ILD layer, along sidewalls of the first bottom electrode the first spacer. The topography-smoothing layer has a top portion over the first MTJ stack and a first side portion laterally surrounding the first spacer. The first side portion has a maximal lateral thickness greater than a maximal vertical thickness of the top portion. The second ILD layer is over the topography-smoothing layer and has a material different from a material of the topography-smoothing layer.