The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yuan-Jen Lee, Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Tien-Wei Chiang, Taipei, TW;
Hung Cho Wang, Taipei, TW;
Kuei-Hung Shen, Hsinchu, TW;
Sheng-Huang Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An integrated circuit device includes a substrate, a memory cell, a magnetic shielding element, an interlayer dielectric layer, and a metallization pattern. The memory cell is over the substrate. The memory cell includes a bottom electrode, a resistance switching element over the bottom electrode, a top electrode over the resistance switching element. The magnetic shielding element is around the memory cell. The interlayer dielectric layer surrounds the memory cell and the magnetic shielding element. The metallization pattern is in the interlayer dielectric layer and connected to the top electrode.