The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jan. 10, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Zhubei, TW;

Hung Cho Wang, Taipei, TW;

Sheng-Chang Chen, Hsinchu County, TW;

Sheng-Huang Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip including a memory cell overlying a substrate and comprising a top electrode. A sidewall spacer structure is disposed along sidewalls of the memory cell. The sidewall spacer structure comprises a first spacer layer on the memory cell, a second spacer layer around the first spacer layer, and a third spacer layer around the second spacer layer. The second spacer layer comprises a lateral segment adjacent to a vertical segment. The lateral segment abuts the top electrode and has a top surface aligned with or disposed below a top surface of the top electrode. A first conductive structure overlies the memory cell and contacts the lateral segment and the top electrode.


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