The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jun. 20, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Harry-Hak-Lay Chuang, Paya Lebar Crescent, SG;
Sheng-Huang Huang, Hsinchu, TW;
Keng-Ming Kuo, Yunlin County, TW;
Hung Cho Wang, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2022.12); H10N 50/01 (2022.12); H10N 50/10 (2022.12); H10N 50/80 (2022.12);
U.S. Cl.
CPC ...
H10B 61/22 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
Abstract
The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.