The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Mar. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory cell with a hard mask and a sidewall spacer of different material is provided. The memory cell may be manufactured by a method comprising forming a multi-layer stack and patterning the same to form the hard mask layer, the top electrode layer and the switching dielectric layer to form a hard mask, a top electrode and a switching dielectric. A sidewall spacer is formed alongside the hard mask, the top electrode, and the switching dielectric with a material different than the hard mask. The bottom electrode layer is patterned according to the sidewall spacer to form a bottom electrode. A dielectric layer is formed surrounding the bottom electrode, the sidewall spacer and overlying the hard mask. An etch is performed followed by a conductive material filling to form a top electrode via extending through the dielectric layer and the hard mask to reach on the top electrode.