Yokohama, Japan

Yoshitaka Tsunashima

This inventor holds 79 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited. Active years: 1986-2016.

USPTO Granted Patents = 79 

% Patents Active = 73.4

Average Co-Inventor Count = 3.2

ph-index = 20

Forward Citations = 1,303(Granted Patents)

Forward Citations (Not Self Cited) = 1,276(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kawasaki, JP (1988)
  • Tokyo, JP (1986 - 1996)
  • Parghkeepsie, NY (US) (1998)
  • Poughkeepsie, NY (US) (1995 - 1999)
  • Inagi, JP (1992 - 2000)
  • Yokahama, JP (2001)
  • Kanagawa, JP (1994 - 2009)
  • Kanagawa-ken, JP (2011)
  • Yokohama, JP (1998 - 2016)

Company Filing History:


Years Active: 1986-2016

Loading Chart...
Areas of Expertise:
Semiconductor Device
Manufacturing Method
Thin Film
Memory Device
Gate Insulating Film
Silicon Nitride
Source Drain
Oxidation Process
Cleaning Method
Trench Filling
Localized SOI
Dummy Gate
79 patents (USPTO):Explore Patents

Title: Innovations of Yoshitaka Tsunashima in Semiconductor Technology

Introduction

Yoshitaka Tsunashima is a prominent inventor based in Yokohama, Japan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 79 patents, he has been at the forefront of innovations that have advanced the field of electronics and materials science.

Latest Patents

Among his latest patents, Tsunashima has developed groundbreaking technologies in semiconductor devices. One notable invention is a semiconductor device and method of manufacturing it, utilizing hexachlorodisilane (SiCl) as a silicon raw material for forming silicon nitride films. This method enables a substantial variation in etching rates compared to silicon oxide films, enhancing manufacturing flexibility through a low-pressure chemical vapor deposition (LPCVD) process.

Another remarkable patent involves a semiconductor memory device characterized by vertical transistors. It features a silicon layer shaped in a column on a silicon substrate, along with a sophisticated gate insulating film structure comprising a tunnel insulating film, charge storage layer, and block insulating film. This invention enhances memory cell configurations and optimizes the functionality of memory devices.

Career Highlights

Tsunashima has worked with renowned companies such as Kabushiki Kaisha Toshiba and Tokyo Electron Limited. His experiences at these leading firms have equipped him with profound insights and expertise, enabling him to develop impactful innovations in semiconductor technology.

Collaborations

Throughout his career, Tsunashima has collaborated with esteemed colleagues, including Ichiro Mizushima and Masayuki Tanaka. These collaborations have contributed to the successful development of advanced technologies and further strengthened his position as a leading inventor in the semiconductor industry.

Conclusion

Yoshitaka Tsunashima's work exemplifies the intersection of creativity and engineering excellence in semiconductor innovations. His substantial patent portfolio reflects a commitment to advancing technology that delivers enhanced performance and efficiency, positioning him as a pivotal figure in the ongoing evolution of electronic devices. His advancements continue to influence the industry, inspiring future innovations.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…