The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2016
Filed:
Apr. 26, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/60 (2005.12); H01L 21/70 (2005.12); H01L 23/48 (2005.12); H01L 21/02 (2005.12); H01L 23/485 (2005.12); H01L 21/768 (2005.12); H01L 21/318 (2005.12); H01L 21/8242 (2005.12);
U.S. Cl.
CPC ...
H01L 21/0217 (2012.12); H01L 21/02208 (2012.12); H01L 21/02211 (2012.12);
Abstract
Hexachlorodisilane (SiCl) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.